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Platinum-Titanium-Oxygen-Gate-FET-Type Hydrogen Sensor for Hydrogen-Based Systems

Yoshitaka SasagoHitoshi NakamuraYumiko AnzaiTsubasa MoritsukaTakahiro OdakaToshiyuki Usagawa

Hitachi,Ltd.Japan

摘要:We have developed novel methods to reduce response time and threshold voltage drift of the FET-type hydrogen sensor.Gate material dependence of the sensor response revealed that the sensitivity of the FET with Pt-Ti-O nanostructure gate is much larger than that of other sensor gate materials.Hydrogen sensors must satisfy the specifications for a fuel cell vehicle to be adopted widely in hydrogen-based systems and one of the most significant characteristics for the use is a response time shorter than one second.However,it took much longer time for the sensor to reach the equilibrium state.Extending Langmuir’s dissociative adsorption theory to non-equilibrium states enabled us to derive hydrogen concentration from both sensor output and its time derivative before the sensor reaches the equilibrium state.The suppression of the threshold voltage drift is significant for long-term reliability of the sensor,and the negative gate bias operation with P-FET-type sensor reduced the drift.Thus,we achieved both a response time of 0.8 s and high drift immunity.
会议名称:

BIT’s 7th Annual World Congress of Nano Science & Technology-2017

会议时间:

2017-10-24

会议地点:

Fukuoka, Japan

  • 专辑:

    电子技术及信息科学

  • 专题:

    自动化技术

  • 分类号:

    TP212

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