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TCAD/DA Methodology for MPU and ASIC with Updated Processes and Devices

Hiroo Masuda

Device Development Center,Hitachi,Ltd.2326 Imai,Ome-shi,Tokyo 198,Japan

摘要:<正>TCAD and DA are the two key computational design tools in VLSI development.Historically,TCAD was used in process and device performance analysis, however,new application for conncurrent process and chip development has been hilighted todate.In this paper,we propose a TCAD/DA methodology for MPU and ASIC design.It allows a predictive chip-design with quick quantitative correlation studies between process-recipe and CKT & delay required in chip performance diagnosis.Effects of statistical process variation on 0.35um CMOS have been rigorously characterized with a new global TCAD calibration technique.Based on the data, process variation effects on a 0.25um CMOS have been predicted,which is concluded that the Vth and Idsat total-variation of the 0.25um CMOS shows less than 10%.Statistical worst modeling is developed which reduce the design guardband by 10%compared with conventional corner worst models.
会议名称:

1998 3rd International Conference on ASIC

会议时间:

1998-10-21

会议地点:

中国北京

  • 专辑:

    信息科技

  • 专题:

    无线电电子学

  • 分类号:

    TN47

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