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摘要:<正>Intrinsic transconductance of carbon-nanotube field-effect transistors(CNTFETs) was investigated with carbon nanotubes (CNTs) grown both by laser ablation and chemical vapor deposition(CVD).The measured transconductance at a drain voltage of -1V was 8.7μS for a CVD-grown CNT with a diameter of 1.5 nm.Very high intrinsic transconductance of 20μS was calculated by considering the contribution of parasitic resistance.Apparent and intrinsic transconductance per unit channel width are considerably larger than those for the state-of-the-art SiMOSFETs. We expect that the performance of CNTFETs will advance further by improving CNT quality and by optimising device structures.
会议名称:

2004 7th International Conference on Solid-State and Integrated Circuits Technology(ICSICT 2004)

会议时间:

2004-10-18

会议地点:

中国北京

  • 专辑:

    信息科技

  • 专题:

    无线电电子学

  • 分类号:

    TN32

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