文献知网节
  • 记笔记
摘要:<正>Industry predictions estimate that,within a few years, semiconductor devices with active regions of less than 10 run in length will be in production.It is well known that the active regions in these devices are smaller than the relative phase coherence lengths,and quantum transport will govern the operation of these devices. With the advent of tri-gate and quantum wire devices, 2D transport simulations become inadequate as the third dimension(width) must be included to account for the underlying physics present in the problem.Here,we present results of an efficient 3D,self-consistent quantum transport simulation applied to an ultra-small SOI MOSFET.We find that the transition between a wide source contact and a discretely doped,narrow channel sets up a resonant tunneling situation in which the channel becomes fully populated and then dissipates as the gate voltage is swept.
会议名称:

2004 7th International Conference on Solid-State and Integrated Circuits Technology(ICSICT 2004)

会议时间:

2004-10-18

会议地点:

中国北京

  • 专辑:

    信息科技

  • 专题:

    无线电电子学

  • 分类号:

    TN386.1

  • 手机阅读
    即刻使用手机阅读
    第一步

    扫描二维码下载

    "移动知网-全球学术快报"客户端

    第二步

    打开“全球学术快报”

    点击首页左上角的扫描图标

    第三步

    扫描二维码

    手机同步阅读本篇文献

  • CAJ下载
  • PDF下载

下载手机APP用APP扫此码同步阅读该篇文章

下载:3 页码:1069-1074 页数:6 大小:1325k

相关推荐
  • 相似文献
  • 读者推荐
  • 相关基金文献
  • 关联作者
  • 相关视频