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摘要:<正>Experimental studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures.A pulsed voltage input(with a 10 ns pulse width)in combination with a four-point measurement was used in a 50 12 environment to determine the drift velocity of electrons in the two-dimensional electron gas as a function of the applied electric field.These measurements show an apparent saturation velocity near 3.1×107 cm/s,at a field of 140 kV/cm.A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.Local inhomogeneities in the electric field are discussed as possible mechanisms for the slightly lower value of the velocity as compared to the simulation.
会议名称:

2004 7th International Conference on Solid-State and Integrated Circuits Technology(ICSICT 2004)

会议时间:

2004-10-18

会议地点:

中国北京

  • 专辑:

    信息科技

  • 专题:

    无线电电子学

  • 分类号:

    TN386

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