Highly Efficient and Linear Class E SiGe Power Amplifier Design
Donald Y.C.Lie1Jeremy D.Popp2Jason F.Rowland2Annie H.Yang2Feipeng Wang3Don Kimball3
1. Dynamic Research Corporation(DRC),San Diego,CA2. SPAWAR System Center,San Diego,CA3. Department of Electrical and Computer Engineering,University of California,San Diego(UCSD),La Jolla,CA
摘要：<正>This paper discusses the design of monolithic RF broadband Class E SiGe power amplifiers（PAs） that are highly efficient and linear.Load-pull measurement data on IBM 7HP SiGe power devices have been made at 900MHz and 2.4GHz and monolithic class E PAs have been designed using these devices to achieve highest power-added-efficiency（PAE） at these frequencies.It is found that high PAE can be achieved for monolithic single-stage Class E PAs designed using high-breakdown SiGe transistors at～65%（900MHz） and～40%（2.4GHz）, respectively,which are roughly～10%lower than the device’s maximum PAE values obtained by load-pull tests under optimal off-chip matching conditions.We have also demonstrated that monolithic SiGe class E PAs can be successfully linearized using an open-loop envelope tracking（ET） technique as their output spectra pass the stringent EDGE transmit mask with margins, achieving overall PAE of 44.4%for the linearized PA system that surpasses the <30%PAE with commercially available GaAs Class AB PAs for EDGE applications. These promising results indicate the feasibility of realizing true single-chip wireless transceivers with on-chip RF SiGe PAs for spectrally-efficient non-constant-envelope modulation schemes.
2006 8th International Conference on Solid-State and Integrated Circuit Technology