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摘要:A low on-state voltage with fast turnoff speed named CSFP(Carrier Stored Floating P-region)-RC (Reverse Conducting)IGBT is proposed in this paper. By sandwich an n layer between the p-well and n-drift as a CS(Carrier Stored)layer,the carrier concentration at the top of the drift is tremendously increased,to make the entire device doping concentration curve into the ideal PIN diode one.The on-state voltage is then sharply decreased.Because the bottom structure is not changed, the turnoff time is still the same as the conventional FP (Floating P-region)-RC-IGBT.With low on-state voltage and fast turnoff speed,shown in the simulation,an impressive energy saving CSFP-RC-IGBT was obtained.
会议名称:

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

会议时间:

2012-10-29

会议地点:

中国陕西西安

  • 专辑:

    信息科技

  • 专题:

    无线电电子学

  • 分类号:

    TN386

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