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Independent Bad Block Management for Mass Storage Flash Memory Arrays

Yongfeng MaHanping DuShaobo Yang

School of Information and Electronics Beijing Institute of Technology

摘要:As flash memory has advantages of high data throughput, high storage density, low power consumption and low cost, it has been widely used in the applications of high speed data acquisition and massive data storage. However, the flash chip generates bad blocks during its service life, which leads to the loss of data. Hence a bad block management in the system of flash memory array is essential to ensure the reliability of the data. The bad block management affects the storage capacity utilization, which is the main factor of the service life of the storage array. This paper introduces a new bad block management, in which each flash chip in the array has a corresponding bad block table. The computer simulation shows that the proposed scheme can improve the capacity utilization according to the size of the array.
会议名称:

2015 6th IEEE International Conference on Software Engineering and Service Science(ICSESS 2015)

会议时间:

2015-09-23

会议地点:

中国北京

  • 专辑:

    电子技术及信息科学

  • 专题:

    计算机硬件技术

  • 分类号:

    TP333

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