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Ferroelectric, Small Bandgap and Wide Bandgap Materials for Ultra-Low Power Green Electronic Devices

Albert Chin1Cheng W.Shih1Kai-Zhi Kan1Tim Chen2

1. Electronics Engineering Dept.,Chiao Tung University2. AUCMOS Technologies

摘要:The power consumption in electronic devices is the major challenge as increasing the demand of IC chips. To lower the VDD and AC power(PAC), both high mobility material and steep turn-on device technology are useful The ferroelectric high-κ Hf ZrO MOSFET can realize no only a small sub-threshold slope(SS) <60 mV /dec for low VDD and PAC, but also a smaller aspect ratio Fin FET The small bandgap(EG) Ge p MOSFET can lower the PAC by 4 times due to its 2× higher field-effective mobility at half effective field. The high-mobility wide EG Ga N MOSFET is a candidate to lower the direct tunneling leakage current and DC power(PDC) by orders of magnitude in future deep X-nm device. The ferroelectric high-κ Hf Zr O MOSFET can also perform DRAM function with lower PDC than existing DRAM.
会议名称:

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

会议时间:

2016-10-25

会议地点:

中国浙江杭州

  • 专辑:

    信息科技

  • 专题:

    无线电电子学

  • 分类号:

    TN386

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