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Monolayer MoS2 for nonvolatile memory applications

Kai-Ping ChangJer-Chyi WangChang-Hsiao ChenLain-Jong LiChao-Sung Lai

Department of Electronic Engineering, Chang Gung UniversityDepartment of Neurosurgery, Chang Gung Memorial HospitalDepartment of Automatic Control Engineering, Feng Chia UniversityInstitute of Atomic and Molecular SciencesDepartment of Nephrology, Chang Gung Memorial HospitalDepartment of Materials Engineering, Ming Chi University of Technology

摘要:In this work, two-dimensional MoS2 has been performed for nonvolatile memory application as charge storage layer. The capacitance-voltage(C-V) hysteresis and programming characteristics of MoS2-NVMs with blocking oxide layer of various thicknesses have been further investigated. The MoS2-NVMs with 9-nm-thck blocking oxide layer exhibits a large hysteresis in the C-V sweeping and the fastest speed in programming characteristics. In addition, both electrons and holes can store in MoS2 monolayer, contributing to a promising application in future high-performance NVMs.
会议名称:

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

会议时间:

2016-10-25

会议地点:

中国浙江杭州

  • 专辑:

    信息科技

  • 专题:

    计算机硬件技术

  • 分类号:

    TP333

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