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Influence of Bi Doping on the Electrical Properties of Ge2Sb2Te5 Thin Films for Phase Change Memory Application

Petr Lazarenko1Alexey Sherchenkov1Sergey Kozyukhin2Alexey Babich1Sergey Timoshenkov1Dmitry Gromov1Alexey Yakubov1Dmitry Terekhov1

1. National Research University of Electronic Technology2. Kurnakov Institute of General and Inorganic Chemistry,RAS

摘要:In this article the influence of different amounts of Bi(0,0.5,1 and 3 wt.%) on the properties of Ge2Sb2Te5 thin films for phase change memory application is investigated.Crystalization temperature,resistivity,width of mobility gap,Urbach energy,activation energy of conductivity,position of the traps,and distribution of density of states in the mobility gap are estimated for all investigated compounds.Nonmonotonic concentration dependences of properties were observed.The significant deviations of parameters are observed for the GST225 with 0,5 wt.% of Bi.
会议名称:

2015 International Conference on Computer Science and Information Engineering(CSIE 2015)

会议时间:

2015-06-28

会议地点:

泰国曼谷

  • 专辑:

    工程科技Ⅰ辑; 信息科技

  • 专题:

    材料科学; 计算机硬件技术

  • 分类号:

    TB383.2;TP333

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