Inkjet-Printing Short-Channel Polymer Transistors with High-Performance and Ultrahigh Photoresponsivity
Hanlin WangCheng ChengLei ZhangHongtao LiuYan ZhaoYunlong GuoWenping HuGui YuYunqi Liu
摘要：Inkjet printing, in the past decade, has proved to be a powerful tool in the cost-effective ambient deposition of electrodes, organic semiconductors, and plastic dielectric layers. With this patterning methodology and proper inks, high performance organic field-effect transistors, organic inverters, organic photodetectors, and polymer solar-cells have been realized. However, it is highly desirable that the resolution of inkjet printing need further improvement, and in fact continuous efforts have been made to reduce the channel length and resolution of inkjet printed transistors. In this work we demonstrate a simple but effective way to mass-fabricate sub-micron gap electrodes down to 700 nm via a 50 μm orifice nozzle, without the need of any photolithographic prepatterning. After a metal deposition and lift-off, high resolution metallic pattern over a large-area substrate was fabricated, and the short-channel polymer transistor array with good uniformity and reproducibility based on a polymeric semiconductor, PDPPTzB T（a diketopyrrolopyrrole-thiazolothiazole copolymer）, exhibited high performances with a maximum hole mobility of 1.67 cm2 V1 s1 and an on/off ratio of 106. Moreover, benefiting from the short-channel device geometry, ultrasensitive photodetectors were obtained with photoresponsivity up to 106 A W1 together with gigantic shift of threshold voltage under a weak illumination.
The 6th International Conference on Nanoscience & Technology, China 2015