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摘要:Field-effect transistor(FET) requires the channel material to be of both moderate bandgap and high mobility. Few-layer black phosphorus has suitable bandgap and higher mobility than two-dimensional(2D) MoS2, but the experimentally achieved maximal mobility(1000 cm~2V-1s-1) is still obviously lower than those of classical semiconductors(1400 and 5400 cm~2V-1s-1 for Si and In P). Here, for the first time, we report on monolayer antimonide phosphorus(SbP) as a promising 2D channel material with suitable direct bandgap, which can satisfy the on/off ratio, and with mobility as high as 104 cm~2V-1s-1 due to the ultralight hole and electron effective masses. This work reveals that 2D SbP could be a promising candidate as eco-friendly high-performance FET channel materials avoiding short-channel effect in the post-silicon era, especially when considering the recent successful experimental realization of arsenide phosphorus(AsP) with similar structure.
会议名称:

第九届计算纳米科学与新能源材料国际研讨会

会议时间:

2016-06-22

会议地点:

中国上海

  • 专辑:

    工程科技Ⅰ辑; 信息科技

  • 专题:

    无机化工; 无线电电子学

  • 分类号:

    TN386;TQ126.33

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