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摘要:Carrier mobility plays a key role in the performance of microelectronic devices, especially the field effect transistors(FET). To design next generation two-dimensional(2D) FET, stable channel materials with higher carrier mobility than silicon and significant band gap are highly desirable, but still not discovered. Here, we report a group of 2D materials of BX(X=P, As, and Sb), which are semiconducting with ultrahigh carrier mobility. Using first-principles calculations, we find that all BX configurations are similar to graphene, but possess direct bandgaps of 1.36, 1.14, and 0.49 e V, respectively. Based on deformation potential theory, BX monolayers are predicted to have superior mobilities(>10~4 cm~2V-1s-1) to phosphorene. Especially, the electron mobility of monolayer BSb is 3.2x10~5 cm~2V-1s-1, approaching the figure of merit in graphene(~3x10~5 cm~2V-1s-1). These results demonstrate that BX monolayers are of paramount significance for next-generation 2D FET manufacture.
会议名称:

第九届计算纳米科学与新能源材料国际研讨会

会议时间:

2016-06-22

会议地点:

中国上海

  • 专辑:

    工程科技Ⅰ辑

  • 专题:

    化学

  • 分类号:

    O611.2

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