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Fabrication of Condenser Microphones on Silicon On Insulator Wafer

SHINSUKE HISHINUMANAOKI KIMORIYUICHIRO KUMAIKOUKI OKUTETSUYA TAKAHASHIDAIKI IROKAWAEMIKO SUGIZAKINAOKI WATANABETSUYOSHI IKEHARARYUTARO MAEDAYASUSHIRO NISHIOKA

Department of Precision Machinery,College of Science and Technology,Nihon UniversityNetworked MEMS Tec h nology Group ,Advanced Manufacturing Research Institute,National Institute of Advanced Industrial Science and Technology (AIST)

摘要:A silicon condenser microphone on an SOI (silicon on insulator) substrate using only one photo mask was fabricated. This microphone consists of a diaphragm with the thickness of 20 m and the diameter of 2 mm, a SiO 2 insulative spacer (4- m-thick buried oxide), and a 450- m-thick silicon back plate with the meshed structures having extremely small (60 m) hexagonal shaped acoustic holes. The gap between the 20- m-thick silicon diaphragm and the back plate is 4 m, which is determined by the thickness of the buried oxide in the SOI wafer. This microphone was confirmed to function as a static pressure sensor. The SOI microphone was also connected to an amplifier circuit, and exposed to the sound pressure of 110 dB at the frequency of 1 kHz. The microphone clearly responded to the input sound, and the output ac voltage of approximately 40 μ V was detected.
会议名称:

The 1st International Congress on Advanced Materials 2011

会议时间:

2011-05-13

会议地点:

中国山东济南

  • 专辑:

    工程科技Ⅰ辑

  • 专题:

    化学; 无机化工

  • 分类号:

    O613.72

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