Microstructural Characterization of 3C-SiC Layers, Grown Epitaxially on 4H-SiC Substrates by CVD
摘要：This work was performed on 3C-SiC layers grown on 4H-SiC substrates by chemical vapour deposition after a surface pre-treatment using GeH 4 gas. By means of TEM, the effects of different Ge H4 fluxes in the 3C layer quality has been studied and compared. An optimal GeH 4 flux permits to drastically reduce twin boundaries but another type of defect occurs and has been widely studied in this paper.
2014 Asia-Pacific Materials Science and Information Technology Conference（APMSIT 2014）