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Microstructural Characterization of 3C-SiC Layers, Grown Epitaxially on 4H-SiC Substrates by CVD

E.K.PolychroniadisM.SallN.Chandran

Department of Physics, Aristotle University of Thessaloniki

摘要:This work was performed on 3C-SiC layers grown on 4H-SiC substrates by chemical vapour deposition after a surface pre-treatment using GeH 4 gas. By means of TEM, the effects of different Ge H4 fluxes in the 3C layer quality has been studied and compared. An optimal GeH 4 flux permits to drastically reduce twin boundaries but another type of defect occurs and has been widely studied in this paper.
会议名称:

2014 Asia-Pacific Materials Science and Information Technology Conference(APMSIT 2014)

会议时间:

2014-12-13

会议地点:

中国上海

  • 专辑:

    理工B(化学化工冶金环境矿业)

  • 专题:

    无机化工

  • 分类号:

    TQ163.4

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