Microstructural Characterization of 3C-SiC Layers, Grown Epitaxially on 4H-SiC Substrates by CVD
E.K.PolychroniadisM.SallN.Chandran
Department of Physics, Aristotle University of Thessaloniki
摘要：This work was performed on 3C-SiC layers grown on 4H-SiC substrates by chemical vapour deposition after a surface pre-treatment using GeH 4 gas. By means of TEM, the effects of different Ge H4 fluxes in the 3C layer quality has been studied and compared. An optimal GeH 4 flux permits to drastically reduce twin boundaries but another type of defect occurs and has been widely studied in this paper.
会议名称：
2014 Asia-Pacific Materials Science and Information Technology Conference（APMSIT 2014）
会议时间：
2014-12-13
会议地点：
中国上海
- 专辑：
理工B(化学化工冶金环境矿业)
- 专题：
无机化工
- 分类号：
TQ163.4
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