The Growth of（001）-Oriented CeO2 Buffer Layers on R-Cut Sapphire Substrates for the Epitaxy of T1-2212 Superconducting Films
摘要：T1-2212 superconducting films were fabricated on r-cut sapphire substrates buffered with（001）-oriented CeO2 films. The buffer layers were deposited by the cerium dioxide sputtering target and the RF magnetron sputtering method. The epitaxial growth of CeO2 films on r-cut sapphire substrates was obtained over a wide range of sputtering parameters,such as temperature, pressure, power and Ar/O2 ratio.The T1-2212 films grown on these buffer layers subsequently were purely c-axis orientation. The critical transition temperature of the best film was 105.6 K, the critical current density was 2.8 MA/cm2（77 K, 0 T） and the surface resistance was 435 μΩ（10 GHz, 77 K）.
The Third International Conference on Applied Engineering,Materials and Mechanics（ICAEMM 2018）