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摘要:T1-2212 superconducting films were fabricated on r-cut sapphire substrates buffered with(001)-oriented CeO2 films. The buffer layers were deposited by the cerium dioxide sputtering target and the RF magnetron sputtering method. The epitaxial growth of CeO2 films on r-cut sapphire substrates was obtained over a wide range of sputtering parameters,such as temperature, pressure, power and Ar/O2 ratio.The T1-2212 films grown on these buffer layers subsequently were purely c-axis orientation. The critical transition temperature of the best film was 105.6 K, the critical current density was 2.8 MA/cm2(77 K, 0 T) and the surface resistance was 435 μΩ(10 GHz, 77 K).
会议名称:

The Third International Conference on Applied Engineering,Materials and Mechanics(ICAEMM 2018)

会议时间:

2018-04-20

会议地点:

日本冲绳

  • 专辑:

    工程科技Ⅰ辑; 工程科技Ⅱ辑

  • 专题:

    材料科学; 工业通用技术及设备

  • 分类号:

    TB383.2

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