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摘要:We explain the experimental improvement in long wavelength response by hydrogen plasma treatment(HPT) in n/i interface. The absorption coefficient of the intrinsic microcrystalline silicon(μc-Si) is decreased in the low energy region(0.8~1.0 eV) by HPT, which indicates a lower defect density in μc-Si layer deposited with HPT than its counterpart without HPT. Simulation by one-dimensional device simulation program for the Analysis of Microelectronic and Photonic Structures(AMPS-1D) shows a higher long wavelength response in μc-Si solar cell if the defect density in intrinsic μc-Si layer is smaller. Our simulation results also disclose that the less defect density in intrinsic layer, the lower recombination rate and the higher electric field is. Higher electric field results in longer drift length which will promote collection of carriers generated by photons with long wavelength. Thus we deduce that HPT decreased defect density in absorber layer and improved the performance of μc-Si solar cells in long wavelength response.
会议名称:

2013 International Conference on Materials for Renewable Energy & Environment(MREE 2013)

会议时间:

2013-05-15

会议地点:

Nanjing,China

  • 专辑:

    工程科技Ⅱ辑

  • 专题:

    电力工业

  • 分类号:

    TM914.4

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