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Resistance requirements of threshold switching selectors in 1S1R crossbar array

Chenglong LinGaosheng LiXueqing Jia

College of Electronic Science, National University of Defense Technology (NUDT)

摘要:Leakage current suppression ability of threshold switching selectors is important for the high-density crossbar array of resistive random access memory(RRAM). Nevertheless, incompatibility of selector with paired RRAM element will lead to serious problems during operation. This paper investigates the ON-/OFF-resistance requirements of threshold switching selectors with simulation in 1 Mb array. Results show that OFF-resistance needs to be higher than certain value while ON-resistance needs to be lower than some value to make sure successful operation. In addition, it presents the method determining the appropriate resistance range in detail. It aims at proposing guideline for fabricating and choosing adequate threshold switching selectors before integrating with RRAM element economically.
会议名称:

2017 International Conference on Electronic Information Technology and Computer Engineering (EITCE 2017)

会议时间:

2017-09-23

会议地点:

中国广东珠海

  • 专辑:

    信息科技

  • 专题:

    计算机硬件技术

  • 分类号:

    TP333

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